麻豆传媒

听

Articles

41. J. Maassen, "Limits of thermoelectric performance with a bounded transport distribution", Phys. Rev. B 104, 184301 (2021).

40. F. Kaadou, J. Maassen, E.R. Johnson, "Improved charge transfer and barrier lowering across a Au-MoS₂ interface through insertion of a layered Ca₂N electride", J. Phys. Chem. C 125, 11656 (2021).

39. P. Strongman, V. Askarpour, J. Maassen, "Impact of dimensional crossover on phonon transport in van der Waals materials: a case study of graphite and graphene", Phys. Rev. B 104, 035428 (2021).

38. C. Rudderham, J. Maassen, "Ab initio thermoelectric calculations of ring-shaped bands in two-dimensional Bi₂Te₃, Bi₂Se₃ and Sb₂Te₃: Comparison of simple scattering approximations", Phys. Rev. B 103, 165406 (2021).

37. B. Beltran-Pitarch, J. Maassen, J. Garcia-Canadas, "Comprehensive impedance spectroscopy equivalent circuit of a thermoelectric device which includes the internal thermal contact resistances", Appl. Energy 299, 117287 (2021).

36. C. Rudderham, J. Maassen, "Analysis of simple scattering models on the thermoelectric performance of analytical electron dispersions", J. Appl. Phys. 127, 065105 (2020).

35.听V. Askarpour, J. Maassen, "Unusual thermoelectric transport anisotropy in quasi-two-dimensional rhombohedral GeTe", Phys. Rev. B 100, 075201 (2019).

34. E. Witkoske, X. Wang, J. Maassen, M. Lundstrom, "Universal behavior of the thermoelectric figure of merit, zT, vs. quality factor", Mater. Today Phys. 8, 43 (2019).

33. M. Emanuel, M. Bhouri, J. Furlotte, D. Groulx, J. Maassen, "Temperature fields generated by a circular heat source (CHS) in an infinite isotropic medium: Treatment of contact resistances with application to thin films", Int. J. Heat Mass Transfer 137, 677 (2019).

32.听J. Maassen, V. Askarpour, "Phonon transport across a Si-Ge interface: The role of inelastic bulk scattering", APL Materials 7, 013203 (2019). [Editor's Pick]

31. M. Emanuel, M. Bhouri, S.L.G. Ackermann, D. Groulx, J. Maassen, "Temperature fields generated by a circular heat source (CHS) in an infinite medium: Analytical derivation and comparison to finite element modeling", Int. J. Heat Mass Transfer 126, 1265 (2018).

30. S. Kim, J. Maassen, J. Lee, S.M. Kim, G. Han, J. Kwon, S. Hong, J. Park, N. Liu, Y.C. Park, I. Omkaram, J.-S. Rhyee, Y.K. Hong, Y. Yoon, "Interstitial Mo-Assisted Photovoltaic Effect in Multilayer MoSe₂ Phototransistors", Adv. Mater. 30, 1705542 (2018).

29. X. Wang, V. Askarpour, J. Maassen, M. Lundstrom, "On the Calculation of Lorenz Numbers for Complex Thermoelectric Materials", J. Appl. Phys. 123, 055104 (2018).

28. Z. Luo, J. Tian, S. Huang, M. Srinivasan, J. Maassen, Y.P. Chen, X. Xu, "Large Enhancement of Thermal Conductivity and Lorenz Number in Topological Insulator Thin Films", ACS Nano 12, 1120 (2018).

27. K.-C. Wang, T.K. Stanev, D. Valencia, J. Charles, A. Henning, V.K. Sangwan, A. Lahiri, D. Mejia, P. Sarangapani, M. Povolotskyi, A. Afzalian, J. Maassen, G. Klimeck, M.C. Hersam, L.J. Lauhon, N.P. Stern, T. Kubis, "Control of interlayer physics in 2H transition metal dichalcogenides", J. Appl. Phys. 122, 224302 (2017).

26. E. Witkoske, X. Wang, M. Lundstrom, V. Askarpour, J. Maassen, "Thermoelectric band engineering: The role of carrier scattering", J. Appl. Phys. 122, 175102 (2017).

25. D. Abarbanel, J. Maassen, "Modeling quasi-ballistic transient thermal transport with spatially sinusoidal heating: a McKelvey-Shockley flux approach", J. Appl. Phys. 121, 204305 (2017).

24.听J. Kaiser, T. Feng, J. Maassen, X. Wang, X. Ruan, M. Lundstrom, "Thermal Transport at the Nanoscale: A Fourier's Law vs. Phonon Boltzmann Equation Study", J. Appl. Phys. 121, 044302 (2017).

23.听J. Dunn, E. Antillon, J. Maassen, M. Lundstrom, A. Strachan, "Role of energy distribution in contacts on thermal transport in Si: A molecular dynamics study", J. Appl. Phys. 120, 225112 (2016).

22. Y. Du, J. Maassen, W. Wu, Z. Luo, X. Xu, P.D. Ye, "Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio", Nano Lett. 16, 6701 (2016).

21. M. Kayyalha, J. Maassen, M. Lundstrom, L. Shi, Y.P. Chen, "Gate-Tunable and Thickness-dependent Electronic and Thermoelectric Transport in few-layer MoS₂", J. Appl. Phys. 120, 134305 (2016). 听

20. J. Maassen, M. Lundstrom, "Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations", J. Appl. Phys. 119, 095102 (2016).

Before joining 麻豆传媒:

19. Z. Luo, J. Maassen, Y. Deng, Y. Du, M. Lundstrom, P.D. Ye, X. Xu, "Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus", Nat. Comm. 6, 8572 (2015).

18. J. Maassen, M. Lundstrom, "A simple Boltzmann transport equation for balllistic to diffusive transient heat transport", J. Appl. Phys. 117, 135102 (2015).

17. J. Maassen, M. Lundstrom, "Steady-state heat transport: Ballistic-to-diffusive with Fourier's law", J. Appl. Phys. 117, 035104 (2015).

16. J. Maassen, M. Lundstrom, "The Landauer Approach to Electron and Phonon Transport", 228th Electrochemical Society (ECS) Meeting 69, 23 (2015). (invited)

15. J. Maassen, M. Lundstrom, "Investigation on the thermoelectric performance of monolayer MoS₂", 14th IEEE Int. Conf. Nanotechnology, 904 (2014).

14. M.T. Pettes, J. Maassen, I. Jo, M. Lundstrom, L. Shi, "Effects of Surface Band Bending and Scattering on Thermoelectric Transport in Suspended Bismuth Telluride Nanoplates", Nano Lett. 13, 5316 (2013).

13. P.V. Burmistrova, J. Maassen, T. Favaloro, B. Saha, S. Salamat, Y.R. Koh, M. Lundstrom, A. Shakouri, T.D. Sands, "Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates", J. Appl. Phys. 113, 153704 (2013).

12. J. Maassen, M. Lundstrom, "A computational study of the thermoelectric performance of ultrathin Bi₂Te₃ films", Appl. Phys. Lett. 102, 093103 (2013).

11. J. Maassen, C. Jeong, A. Baraskar, M. Rodwell, M. Lundstrom, "Full band calculations of the intrinsic lower limit of contact resistivity", Appl. Phys. Lett. 102, 111605 (2013).

10. J. Maassen, M. Harb, V. Michaud-Rioux, Y. Zhu, H. Guo, "Quantum transport modeling from first principles", Proc. of the IEEE 101, 518 (2013). (invited)

9. J. Maassen, H. Guo, "Suppressing leakage by localized doping in Si nanotransistor channels", Phys. Rev. Lett. 109, 266803 (2012).

8. D.J. Oliver, J. Maassen, M. El Ouali, W. Paul, T. Hagedorn, Y. Miyahara, Y. Qi, H. Guo, P. Grutter, "Conductivity of an atomically defined metallic interface", PNAS 109, 19097 (2012).听

7. V. Yu, E. Whiteway, J. Maassen, M. Hilke, "Raman spectroscopy of the internal strain of a graphene layer grown on copper tuned by chemical vapor deposition", Phys. Rev. B 84, 205407 (2011).

6. J. Maassen, W. Ji, H. Guo, "Graphene Spintronics: The Role of Ferromagnetic Electrodes", Nano Lett. 11, 151 (2010).

5. S.D. Bennett, J. Maassen, A.A. Clerk, "Scattering Approach to Backaction to Coherent Nanoelectromechanical Systems", Phys. Rev. Lett. 105, 217206 (2010).

4. J. Maassen, W. Ji, H. Guo, "First principles study of electronic transport through a Cu(111)|graphene junction", Appl. Phys. Lett. 97, 142105 (2010). 听

3. J. Maassen, F. Zahid, H. Guo, "Effects of dephasing in molecular transport junctions using atomistic first principles", Phys. Rev. B 80, 125423 (2009).

2. J. Maassen, A. Yelon, L.A. Hamel, "Simulation of picosecond domain time-of-flight experiments in a-Si:H", J. Non-Cryst. Solids 353, 4779 (2007).

1. J. Maassen, A. Yelon, L.A. Hamel, W.C. Chen, "Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H", Mat. Res. Soc. Proceedings 862, A15.2 (2005).

Book Chapters

1. "2D Materials: Properties and Devices", Cambridge University Press (2017).
Chapter title:听"Theoretical overview of black phosphorus" by A. Chaves, J. Wei, J. Maassen, T. Dumitrica, T. Low.